At this week’s VLSI Symposium, IMEC will present significant progress in the manufacturability of FinFETs – devices used to improve CMOS reliability.
They address short-channel effects and leakage issues when scaling CMOS towards the 32nm node and beyond. IMEC has improved its process to yield reproducible FinFETs with fin widths down to 5nm and high aspect ratio using 193nm immersion lithography and dry etching. By using these ultra-thin body devices, the need of channel doping is eliminated. This results in reduced parametric spread due to dopant fluctuations together with reduced junction leakage.
