CMOSIS, the leading European supplier of advanced CMOS image sensors, is demonstrating its NIR (Near Infra Red) enhanced 12-Megapixel/300 fps CMOS image sensor CMV12000, which is now available in sample quantities. High volume production will ramp up towards the end of 2014. The CMV12000 excels current market solutions with a combination of excellent global shuttering with a stunning 300 fps at full resolution serving a broad range of applications like broadcasting, intelligent traffic solutions, machine vision and motion capture. Now a NIR enhanced version with improved QE between 650 and 1000 nm is added to the CMV12000 product portfolio. At ISS 2014, held in the Pacifico Yokohama, CMOSIS demonstrates the NIR enhanced CMV12000 at Booth 57.
CMOSIS, a leading supplier of advanced CMOS image sensors, participates in this year's Image Sensing Show (ISS) displaying and demonstrating its comprehensive portfolio of advanced CMOS image sensors. Outstanding in CMOSIS' portfolio is the recent NIR enhanced version of the proven CMV12000/300FPS, first announced in 2013. The NIR enhanced CMV12000 version is processed on 12 um epi Si wafer starting material. This epi layer is 7 µm thicker than on the “standard wafers” and significantly increases the QE for wavelengths above 600 nm. At 825 nm the QE is almost twice the QE on 5 um epi Si wafers, increasing from 15% to 30% for the monochrome part.
"We are very happy to offer this NIR enhanced CMV12000/300FPS version," said Lou Hermans, Chief Operating Officer, CMOSIS. " We see growing demand for our CMV2000 and CMV4000 NIR enhanced imagers for image acquisition outside the visual wavelength range, in particular for machine vision and traffic applications. The introduction of this new imager is the next logical step to support customers in this field."
The CMV12000 NIR is available today in sample volumes. Volume orders and shipments will be supported towards the end of 2014.
