FEI has introduced two DualBeam focused ion beam (FIB), scanning electron microscopy (SEM) systems, ideal for materials research applications. The Scios DualBeam provides fast 2D and 3D sample characterisation, while the Helios NanoLab 660 DualBeam adds capabilities for specialised applications, such as the fabrication of prototypes for nanometre-scale devices.
For researchers working with materials that are difficult to image without coatings or preparation, the Scios offers technology innovations to mitigate these challenges. The new electron column is designed to handle characterisation routines for both magnetic and non-magnetic samples. Its high-current capability provides fast X-ray analysis and can also be used to improve FIB milling accuracy on non-conductive samples by neutralising accumulated charge.
The Scios also includes the new Trinity detector suite, comprising of three highly-efficient, in-lens detectors designed to detect electrons of different types and energies. Manipulating the detectors and mixing their signals allows the operator to enhance material contrast, topographic contrast, edge detection, surface specificity and much more. This gives the user immediate access to a greater range of visual data from the sample for rapid characterisation of materials.
The Helios NanoLab 660 DualBeam incorporates FEI’s extreme high-resolution scanning electron microscope (XHR SEM) technology and delivers sub-nanometre imaging resolution over a wide range of accelerating voltages (0.5-30 kV). This allows researchers working with delicate or beam-sensitive materials to have access to fine structural, nanoscale details without damaging the sample.
These two new DualBeams join FEI’s Versa 3D system, configurable for dynamic experiments, to provide a portfolio of complementary FIB/SEM solutions for materials research applications.
