Opto Diode, a division of ITW, and a member of the ITW Photonics Group, has introduced the third in the family of three super-high-power infrared (IR) emitters. Based on gallium aluminium arsenide (GaAlAs) technology, the new OD-250 features a wide angle, very uniform optical beam with ultra high optical output. Total power output is 250mW (typical) with a minimum output at 160mW. Peak emission wavelength is 850nm, making this IR emitter ideal for imaging in military and security applications.
The device has a spectral bandwidth of 40nm at 50 per cent with a half intensity beam angle at 110°. The OD-250 is highly durable; metal surfaces are gold-plated and there are four wire bonds on die corners for redundancy. The standard, three-lead TO-39 package can be stored and/or operated in extreme temperatures ranging from -40°C to 100°C, (maximum junction temperature at 100°C). The IR emitters feature rise times of 20nsec and fall times of 20nsec. They are designed for use in night vision (NV) imaging technology, such as night vision cameras and/or goggles, and for integration into illuminators and markers.
